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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6625-A Issued Date : 1994.10.04 Revised Date : 2000.10.01 Page No. : 1/2 HBD678 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD678 is designed for use as output devices in complementary general purpose amplifier applications. Features * High Current Gain * Monolithic Constructor Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 40 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ...................................................................................... 60 V BVCEO Collector to Emitter Voltage................................................................................... 60 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current .............................................................................................................. 4 A IB Base Current .................................................................................................................... 1 A Electrical Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICEO ICBO IEBO *VCE(sat) *VBE(on) *hFE Min. 60 60 5 750 Typ. Max. 200 200 2 2.5 2.5 Unit V V V uA uA mA V V Test Conditions IC=1mA IC=50mA IE=1mA VCB=30V VCB=60V VBE=5V IC=1.5A, IB=30mA IC=1.5A, VCE=3V IC=1.5A, VCE=3V *Pulse Test : Pulse Width 380us, Duty Cycle2% HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking : Spec. No. : HE6625-A Issued Date : 1994.10.04 Revised Date : 2000.10.01 Page No. : 2/2 A B D E F 3 2 I G 1 J M L K O H HSMC Logo Part Number Date Code Product Series Rank Ink Marking C Style : Pin 1.Emitter 2.Collector 3.Base N 3-Lead TO-126ML Plastic Package HSMC Package Code : D *:Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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